Modeling of random channel parameter variations in MOS transistors
نویسندگان
چکیده
Widely used approaches to modeling random effects and extracting random parameters in matching-critical circuits are based upon models derived under the widely accepted premise that distributed parameter devices can be modeled with lumped parameter models. In this paper, a new stochastic approach based upon a distributed parameter model is presented that offers improvement in predicting the effects of random parameter variations on device matching.
منابع مشابه
Modeling Transistor Mismatch
20 0740-7475/06/$20.00 © 2006 IEEE Copublished by the IEEE CS and the IEEE CASS IEEE Design & Test of Computers DIGITAL AND ANALOG ICS generally rely on the concept of matched behavior between identically designed devices.1-3 Time-independent variations between identically designed transistors, called mismatch, affect the performance of most analog and even digital MOS circuits. In analog circu...
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